Перегляд за автором "Lytvynenko, O.A."

Сортувати за: Порядок: Результатів:

  • Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature ...
  • Karachevtseva, L.A.; Lytvynenko, O.A.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for ...
  • Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures ...
  • Ivanov, V.I.; Karachevtseva, L.A.; Karas, N.I.; Lytvynenko, O.A.; Parshin, K.A.; Sachenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The effects of the increase of photoconductivity in periodic macroporous silicon structures depending on the size and period of cylindrical macropores are investigated. It is obtained that the ratio of macroporous silicon ...